STP5NA80FP n - channel enhancement mode fast power mos transistor preliminary data n typical r ds(on) = 1.8 w n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate charge minimized n reduced threshold voltage spread description this series of power mosfets represents the most advanced high voltage technology. the optmized cell layout coupled with a new proprietary edge termination concur to give the device low rds(on) and gate charge, unequalled ruggedness and superior switching performance. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 800 v v dgr drain- gate voltage (r gs = 20 k w ) 800 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 2.8 a i d drain current (continuous) at t c = 100 o c 1.8 a i dm ( ) drain current (pulsed) 19 a p tot total dissipation at t c = 25 o c40w derating factor 0.32 w/ o c v iso insulation withstand voltage (dc) 2000 v t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area type v dss r ds(on) i d STP5NA80FP 800 v < 2.4 w 2.8 a october 1997 1 2 3 to-220fp 1/5
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 3.12 62.5 0.5 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 4.7 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 110 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 100 o c 25 250 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs = 10v i d = 2.5 a 1.8 2.4 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 4.7 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 2.5 a 2.7 5.2 s c iss c oss c rss input capacitance output capacitance reversetransfer capacitance v ds = 25 v f = 1 mhz v gs = 0 1250 140 35 1700 190 50 pf pf pf STP5NA80FP 2/5
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 400 v i d = 2.5 a r g = 47 w v gs = 10 v 40 100 55 135 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v i d = 3 a v gs = 10 v 55 8 24 75 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 640 v i d = 5 a r g = 47 w v gs = 10 v (see test circuit, figure 5) 75 25 110 100 35 150 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 4.7 19 a a v sd ( * ) forward on voltage i sd = 4.7 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c (see circuit, figure 5) 800 15.2 38 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area STP5NA80FP 3/5
dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 0.385 0.417 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 to-220fp mechanical data STP5NA80FP 4/5
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to change without noti ce. this publication supersedes and replaces all info rmation previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in l ife support dev ices or systems without express written approval of s gs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in it aly - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - i taly - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . STP5NA80FP 5/5
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